st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 1 description the st2300srg is the nchannel logic enhancement mo de power field effect transistor is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize onstate resistance.these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low inline power loss are needed in a very small outline surface mount pa ckage. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code ordering information part number package part marking st2300srg sot23 42ya process code : a ~ z ; a ~ z st2300srg ; s : sot23 r : tape reel ; g : pb C fr ee feature 20v/6.0a, r ds(on) = 35m (typ.) @v gs = 10v 20v/5.0a, r ds(on) = 48m @v gs = 4.5v 20v/4.5a, r ds(on) = 90m @v gs = 2.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot23 package design 3 1 2 d g s 3 1 2 42ya
st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 2 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 20 v gatesource voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d 6.0 3.0 a pulsed drain current i dm 10 a continuous source current (diode conduction) i s 1.0 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storage temperature range t stg 55/150 thermal resistancejunction to ambient r ja 140 /w
st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 3 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.4 1.2 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =20v,v gs =0v 1 ua v ds =20v,v gs =0v t j =85 10 drainsource onresistance r ds(on) v gs = 10v,i d =6.0a v gs = 4.5v,i d =5.0a v gs =2.5v,i d =4.5a 0.035 0.048 0.090 forward tranconductance g fs v ds =15v,i d =5.0a 30 s diode forward voltage v sd i s =1.7a,v gs =0v 0.9 1.2 v dynamic total gate charge q g v ds =10v v gs =4.5v i d 5a 10 13 nc gatesource charge q gs 1.4 gatedrain charge q gd 2.1 input capacitance c iss v ds =10v v gs =0v f=1mh z 600 pf output capacitance c oss 120 reverse transfer capacitance c rss 100 turnon time t d(on) tr v dd =10v r l =10 i d =1a v gen =4.5v r g =6 15 25 ns 40 60 turnoff time t d(off) tf 45 65 30 40
st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 4 typical characterictics (25 unless noted)
st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 5 typical characterictics (25 unless noted)
st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 6 typical characterictic
st2300srg n channel enhancement mode mosfet 6.0a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2300srg 2005. v1 7 sot-23 package outline
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